SH8KE6 is a dual N-channel power MOSFET in an SOP8 package, designed for switching applications. Each MOSFET has a 100V drain-source voltage rating and a continuous drain current of ±4.5A, with a maximum on-resistance of 58mΩ at 10V gate-source voltage. The device is rated for 2.0W total power dissipation and operates over a junction temperature range of -55°C to +150°C. It is packaged in an embossed tape reel with 2500 pieces per reel and is RoHS compliant and halogen-free. Thermal resistance is 62.5°C/W from junction to ambient when mounted on a ceramic board and 89.2°C/W when mounted on a copper board.
SH8KE6 is a low on-resistance MOSFET ideal for switching applications. This product includes two 100V Nch MOSFETs in a small surface mount package (SOP8).
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SH8KE6 |
| Product Name | 100V 4.5A Dual Nch+Nch, SOP8, Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 100 volts |
| IDSS | 4500 milliamps |
| QG | 3.3 nC |
| PD | 2000 milliwatts |