The SH8KC7 is a dual N-channel power MOSFET with a 60V drain-source voltage rating and a continuous drain current of ±10.5A, packaged in an SOP8 surface-mount format. It has a maximum on-resistance of 12.4mΩ at 10V gate-source voltage and 17.2mΩ at 4.5V gate-source voltage. The device supports a power dissipation of 2.0W and operates within a junction temperature range of -55°C to +150°C. It is RoHS compliant and halogen-free, with an embossed tape and reel packaging of 2500 pieces per reel. Thermal resistance is 62.5°C/W from junction to ambient when mounted on a ceramic board and 89.2°C/W when mounted on a copper board. The part meets AEC-Q200 qualification and is designed for switching applications.
SH8KC7 is a low on-resistance MOSFET ideal for switching applications. This product includes two 60V MOSFETs in a small surface mount package (SOP8).
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SH8KC7 |
| Product Name | 60V 10.5A Dual Nch+Nch, SOP8, Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 10500 milliamps |
| QG | 10.8 nC |
| PD | 2000 milliwatts |