ROHM Semiconductor GmbH 60V Nch+Nch Power MOSFET SH8K37

Description
SH8K37GZETB is low on-resistance and small surface mount package MOSFET. It is suitable for switching and motor drive.
Description
SH8K37GZETB is low on-resistance and small surface mount package MOSFET. It is suitable for switching and motor drive.
Datasheet
Datasheet Summary
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SH8K37 is a dual N-channel power MOSFET in an SOP8 package designed for switching and motor drive applications. It has a drain-source voltage rating of 60 V and a continuous drain current of ±5.5 A. The maximum on-resistance at 10 V gate-source voltage is 46 mΩ. The device is RoHS compliant and halogen-free. Power dissipation is rated at 2.0 W when mounted on a ceramic board and 1.4 W on FR4. Thermal resistance is 62.5 °C/W and 89.2 °C/W respectively. Junction temperature ranges from -55 °C to +150 °C.

Datasheet Summary
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SH8K37 is a dual N-channel power MOSFET in an SOP8 package designed for switching and motor drive applications. It has a drain-source voltage rating of 60 V and a continuous drain current of ±5.5 A. The maximum on-resistance at 10 V gate-source voltage is 46 mΩ. The device is RoHS compliant and halogen-free. Power dissipation is rated at 2.0 W when mounted on a ceramic board and 1.4 W on FR4. Thermal resistance is 62.5 °C/W and 89.2 °C/W respectively. Junction temperature ranges from -55 °C to +150 °C.

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60V Nch+Nch Power MOSFET - SH8K37 - ROHM Semiconductor GmbH
Willich, Germany
60V Nch+Nch Power MOSFET
SH8K37
60V Nch+Nch Power MOSFET SH8K37
SH8K37GZETB is low on-resistance and small surface mount package MOSFET. It is suitable for switching and motor drive.

SH8K37GZETB is low on-resistance and small surface mount package MOSFET. It is suitable for switching and motor drive.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number SH8K37
Product Name 60V Nch+Nch Power MOSFET
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 5500 milliamps
QG 5.2 nC
PD 2000 milliwatts
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