ROHM Semiconductor GmbH 40V Nch+Nch Power MOSFET SH8K26

The SH8K26 is a dual N-channel power MOSFET in an SOP8 surface-mount package, designed for switching applications. It features a drain-source voltage rating of 40V, continuous drain current of ±6.0A, and a maximum on-resistance of 38mΩ at 10V gate-source voltage. Power dissipation is rated at 2.0W with a junction temperature range of -55°C to +150°C. The device is RoHS compliant and halogen-free, with tape-and-reel packaging in 2500-piece units. Thermal resistance is 62.5°C/W on a ceramic board and 89.2°C/W on a copper board. Gate threshold voltage ranges from 1.0V to 2.5V, and the device includes integrated body diodes with a forward voltage of up to 1.2V at 6.0A.