The SH8J65 is a dual P-channel MOSFET in an SOP8 package designed for switching applications. Each element has a drain-source voltage rating of -30 V and a continuous drain current of ±7.0 A. The on-state resistance is 21.5 mΩ at -7 A and -10 V gate-source drive, rising to 40.8 mΩ at -3.5 A and -4.0 V. Total power dissipation is 2.0 W for the package and 1.4 W per element when mounted on a ceramic board. The device includes built-in gate-source protection diodes and body diodes. Channel temperature range is -55°C to 150°C. The package dimensions and pinout conform to standard SOP8 layout with identical lead dimensions.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SH8J65 | SH8J65 |
| Product Name | 4V Drive Pch+Pch MOSFET | 4V Drive Pch+Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -7000 milliamps | -7000 milliamps |
| PD | 2000 milliwatts | 2000 milliwatts |
