The SCT4045DW7 is a 750 V N-channel silicon carbide (SiC) power MOSFET in a TO-263-7L surface-mount package for high-efficiency switching applications. It has a typical drain-source on-resistance of 45 mΩ at 25 °C and a continuous drain current rating of 31 A at 25 °C, derating to 22 A at 100 °C. The junction temperature maximum is 175 °C with a thermal resistance from junction to case of 1.2 to 1.6 K/W. The gate-source voltage is rated from -4 V to +21 V DC, with a recommended turn-on voltage of +15 V to +18 V. The body diode has a forward voltage of 3.3 V at 17 A and a reverse recovery time of 9.3 ns. The device is RoHS compliant.
SCT4045DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4045DW7 |
| Product Name | 750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
