The SCT4045DR is a 750 V N-channel silicon carbide (SiC) power MOSFET in a TO-247-4L package for high-efficiency switching applications. It has a typical on-resistance of 45 mΩ at 25°C and a continuous drain current rating of 34 A at 25°C, reducing to 24 A at 100°C. The device includes a driver source terminal to enhance switching performance, with a recommended gate drive voltage of +15 V to +18 V. Thermal resistance from junction to case is 0.98 K/W typical. The gate-source voltage range is -4 V to +21 V, with a surge limit of +23 V. The body diode exhibits a reverse recovery time of 9.3 ns and peak recovery current of 19 A. The device is RoHS compliant and rated for a maximum junction temperature of 175°C and storage temperatures from -40°C to +175°C.
SCT4045DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SCT4045DR |
| Product Name | 750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET |
| V(BR)DSS | 750 volts |
| rDS(on) | 0.0450 ohms |
| IDSS | 34000 milliamps |
| PD | 115000 milliwatts |
