The SCT4045DE is a 750 V N-channel silicon carbide (SiC) power MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and induction heating. It has a typical on-resistance of 45 mΩ at 25°C and a continuous drain current rating of 34 A at 25°C, decreasing to 24 A at 100°C. The device supports a maximum junction temperature of 175°C and features a thermal resistance junction-to-case of 0.98 K/W. It is RoHS compliant, with gate-source voltage ratings from -4 V to +21 V DC and a recommended turn-on drive voltage of +15 V to +18 V. The body diode has a reverse recovery time of 19 ns and a peak reverse recovery current of 9 A. The part is supplied in a tube pack of 30 units.
SCT4045DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SCT4045DE |
| Product Name | 750V, 45mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET |
| V(BR)DSS | 750 volts |
| rDS(on) | 0.0450 ohms |
| IDSS | 34000 milliamps |
| PD | 115000 milliwatts |
