ROHM Semiconductor GmbH 750V, 45mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET SCT4045DE

Description
SCT4045DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet
Description
SCT4045DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet

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750V, 45mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET - SCT4045DE - ROHM Semiconductor GmbH
Willich, Germany
750V, 45mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
SCT4045DE
750V, 45mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET SCT4045DE
SCT4045DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

SCT4045DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number SCT4045DE
Product Name 750V, 45mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
V(BR)DSS 750 volts
rDS(on) 0.0450 ohms
IDSS 34000 milliamps
PD 115000 milliwatts
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