SCT4036KRHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET designed for high-voltage switching applications, featuring a 1200 V drain-source voltage rating and a typical on-resistance of 36 mΩ at 25°C. It is packaged in a TO-247-4L case with a continuous drain current of 43 A at 25°C and 30 A at 100°C. The device is qualified to AEC-Q101 and complies with RoHS standards. Thermal resistance from junction to case is 0.65 to 0.85 K/W. The gate-source voltage range is -4 V to +21 V DC, with a recommended turn-on voltage of +15 V to +18 V. Reverse recovery time is 9.2 ns under specified conditions, and it supports fast switching with low switching losses. The part includes a separate driver source and power source to prevent malfunction when correctly used.
AEC-Q101 qualified automotive grade product. SCT4036KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4036KRHR |
| Product Name | 1200V, 43A, 4-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247-4L |
