ROHM Semiconductor GmbH 1200V, 36mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET SCT4036KR

Description
SCT4036KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet
Description
SCT4036KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet

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1200V, 36mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET - SCT4036KR - ROHM Semiconductor GmbH
Willich, Germany
1200V, 36mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
SCT4036KR
1200V, 36mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET SCT4036KR
SCT4036KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

SCT4036KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number SCT4036KR
Product Name 1200V, 36mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
V(BR)DSS 1200 volts
rDS(on) 0.0360 ohms
IDSS 43000 milliamps
PD 176000 milliwatts
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