The SCT4036KR is a 1200V N-channel silicon carbide (SiC) power MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as solar inverters and DC/DC converters. It has a typical on-resistance of 36 mΩ at 25°C and a continuous drain current rating of 43 A at 25°C, reducible to 30 A at 100°C. The device features a dedicated driver source pin for optimized gate control and supports a gate-source voltage range of -4 V to +21 V, with recommended turn-on and turn-off voltages of +15 V to +18 V and 0 V, respectively. The junction-to-case thermal resistance is 0.65 K/W typical, and the maximum junction temperature is 175°C. It is RoHS compliant and packaged in tubes of 30 units. Reverse recovery charge is 140 nC, and the body diode has a peak reverse recovery current of 31 A.
SCT4036KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SCT4036KR |
| Product Name | 1200V, 36mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET |
| V(BR)DSS | 1200 volts |
| rDS(on) | 0.0360 ohms |
| IDSS | 43000 milliamps |
| PD | 176000 milliwatts |
