SCT4026DW7 is a 750 V, N-channel silicon carbide (SiC) power MOSFET in a TO-263-7L package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and switch mode power supplies. It has a typical on-resistance of 26 mΩ at 25°C and a continuous drain current rating of 51 A at 25°C, reducing to 36 A at 100°C. The device supports a maximum junction temperature of 175°C and features fast switching and low reverse recovery characteristics. It is RoHS compliant and supplied in embossed tape reels of 1000 units. Thermal resistance from junction to case is 0.79 K/W typically.
SCT4026DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4026DW7 |
| Product Name | 750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
