The SCT4026DR is a 750 V, N-channel silicon carbide (SiC) power MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as solar inverters and DC/DC converters. It has a typical on-resistance of 26 mΩ at 25°C and supports a continuous drain current of 56 A at 25°C, reducing to 39 A at 100°C. The device features a recommended gate-source drive voltage of +15 to +18 V for turn-on and 0 V for turn-off, with a gate-source voltage range of -4 to +21 V. The thermal resistance from junction to case is 0.65 to 0.85 K/W. The package includes a separate driver source pin for improved switching performance. It is RoHS compliant with Pb-free lead plating.
SCT4026DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SCT4026DR |
| Product Name | 750V, 26mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET |
| V(BR)DSS | 750 volts |
| rDS(on) | 0.0260 ohms |
| IDSS | 56000 milliamps |
| PD | 176000 milliwatts |
