SCT4026DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SCT4026DE |
| Product Name | 750V, 26mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET |
| V(BR)DSS | 750 volts |
| rDS(on) | 0.0260 ohms |
| IDSS | 56000 milliamps |
| PD | 176000 milliwatts |
