The SCT4026DE is a 750V N-channel silicon carbide (SiC) power MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and induction heating. It has a typical on-resistance of 26 mΩ at 25°C and a continuous drain current rating of 56 A at 25°C, decreasing to 39 A at 100°C. The device features a gate-source voltage range of -4V to +21V, with recommended drive voltages of +15V to +18V for turn-on and 0V for turn-off. Maximum junction temperature is 175°C, and thermal resistance from junction to case is 0.65 to 0.85 K/W. The body diode exhibits a typical forward voltage of 3.3V at 29A and a reverse recovery time of 19 ns. The part is RoHS compliant and packaged in a tube with a basic ordering unit of 30 pieces.
SCT4026DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SCT4026DE |
| Product Name | 750V, 26mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET |
| V(BR)DSS | 750 volts |
| rDS(on) | 0.0260 ohms |
| IDSS | 56000 milliamps |
| PD | 176000 milliwatts |
