The SCT4013DW7 is a 750 V, N-channel silicon carbide (SiC) power MOSFET in a TO-263-7L package, designed for high-efficiency switching applications such as solar inverters and DC/DC converters. It has a typical on-resistance of 13 mΩ at 25 °C and a continuous drain current rating of 98 A at 25 °C, dropping to 69 A at 100 °C. The device supports a peak pulsed drain current of 233 A and features fast switching and reverse recovery characteristics. Thermal resistance from junction to case is 0.43 K/W typical. The gate-source voltage is rated from -4 V to +21 V DC, with a recommended turn-on voltage of +15 V to +18 V. It is RoHS compliant and packaged in embossed tape reels of 1000 units. Operating junction temperature ranges from -40 °C to 175 °C.
SCT4013DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4013DW7 |
| Product Name | 750V, 98A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
