The SCT4013DR is a 750 V, N-channel silicon carbide (SiC) power MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and switch mode power supplies. It has a typical on-resistance of 13 mΩ at 25°C and a continuous drain current rating of 105 A at 25°C, reducing to 74 A at 100°C. The device features a recommended gate-source drive voltage of +15 to +18 V for turn-on and 0 V for turn-off, with a maximum gate-source voltage of +21 V DC. Thermal resistance from junction to case is 0.37 to 0.48 K/W. The package includes a separate driver source terminal to optimize high-speed switching performance. It is RoHS compliant and meets JESD51-14 for thermal resistance measurement.
SCT4013DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SCT4013DR |
| Product Name | 750V, 13mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET |
| V(BR)DSS | 750 volts |
| rDS(on) | 0.0130 ohms |
| IDSS | 105000 milliamps |
| PD | 312000 milliwatts |
