The SCT4013DE is a Silicon-carbide (SiC) MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 750V and a continuous drain current rating of 105A. It has a low on-resistance of 13mΩ, which contributes to improved efficiency in power conversion. The device is suitable for various applications, including induction heating, switch mode power supplies, DC/DC converters, and solar inverters. This MOSFET operates with a recommended gate-source voltage of 15V to 18V, facilitating straightforward drive requirements. It also offers a robust thermal performance with a maximum junction temperature of 175°C and a thermal resistance from junction to case of 0.48 K/W. The SCT4013DE is RoHS compliant and features a TO-247N package, making it easy to integrate into existing designs. Its fast switching speed and low switching losses enhance overall system efficiency, making it a viable choice for engineers looking to optimize their power electronics projects.
SCT4013DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4013DE |
| Product Name | 750V, 105A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-247; TO-247N |
