The SCT3120AL is an N-channel SiC power MOSFET rated for 650V drain-source voltage and 21A continuous drain current at 25°C, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It is packaged in a TO-247N case with a typical on-resistance of 120mΩ at 25°C and a thermal resistance junction-to-case of 1.12 to 1.46 K/W. The device features fast switching speed, a body diode with a reverse recovery time of 13ns, and operates with a recommended gate drive voltage of 0V/+18V. It is RoHS compliant and carries a maximum junction temperature of 175°C.
SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3120AL | SCT3120AL |
| Product Name | 650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 650 volts | |
| rDS(on) | 0.1200 ohms |
