The SCT3060AL is a 650 V N-channel silicon carbide (SiC) power MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 60 mΩ at 25°C and a continuous drain current rating of 39 A at 25°C case temperature. The device includes a body diode with a reverse recovery time of 15 ns and supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.70 to 0.91 K/W. It is RoHS compliant and features fast switching and low gate charge for simplified driving.
SCT3060AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3060AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3060AL | SCT3060AL |
| Product Name | 650V, 39A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 650 volts | |
| rDS(on) | 0.0600 ohms |
