The SCT3040KL is a 1200V N-channel silicon carbide (SiC) MOSFET in a TO-247N package designed for high-efficiency power conversion applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 40 mΩ at 25°C and supports a continuous drain current of 55 A at 25°C, decreasing to 39 A at 100°C. The device features fast switching speed, low gate charge, and a built-in body diode with a reverse recovery time of 25 ns. Thermal resistance from junction to case is 0.44 to 0.57 K/W. It is RoHS compliant and rated for a junction temperature up to 175°C. The recommended gate drive voltage is 0 V to +18 V.
SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3040KL | SCT3040KL |
| Product Name | 1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 1200 volts | |
| rDS(on) | 0.0400 ohms |
