ROHM Semiconductor GmbH 1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3040KL

Description
SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet
Description
SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3040KL - ROHM Semiconductor GmbH
Willich, Germany
1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3040KL
1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3040KL
SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet
N-channel Silicon Carbide Power MOSFET - SCT3040KL - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
N-channel Silicon Carbide Power MOSFET
SCT3040KL
N-channel Silicon Carbide Power MOSFET SCT3040KL
SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Power MOSFET
Product Number SCT3040KL SCT3040KL
Product Name 1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET N-channel Silicon Carbide Power MOSFET
Package Type TO-247; TO-247N TO-247
Transistor Grade / Operating Range Commercial Commercial
Transistor Technology / Material Silicon Carbide
V(BR)DSS 1200 volts
rDS(on) 0.0400 ohms
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