The SCT3030KL is a 1200 V, N-channel silicon carbide (SiC) MOSFET in a TO-247 package, with a typcial on-resistance of 30 mΩ and a continuous drain current of 72 A at 25°C. It features fast switching and reverse recovery, a gate-source voltage range of -4 to +22 V, and a maximum junction temperature of 175°C. The device has a thermal resistance from junction to case of 0.34 to 0.44 K/W and is RoHS compliant. The body diode supports a continuous forward current of 72 A and a reverse recovery charge of 135 nC under specified conditions.
SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3030KL | SCT3030KL |
| Product Name | 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 1200 volts | |
| rDS(on) | 0.0300 ohms |
