The SCT3030ALHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET in a TO-247N package, rated for 650 V drain-source voltage and 70 A continuous drain current at 25°C. It features a typical on-resistance of 30 mΩ at 25°C, AEC-Q101 qualification, RoHS compliance, and a maximum junction temperature of 175°C. The device has a thermal resistance junction-to-case of 0.44 to 0.57 K/W and a body diode with a reverse recovery time of 26 ns. Its gate-source voltage range is -4 to +22 V, with a recommended drive voltage of +18 V.
AEC-Q101 qualified automotive grade product. SCT3030ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT3030ALHR |
| Product Name | 650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247N |
