SCT3030AL is a 650V N-channel silicon carbide (SiC) MOSFET in a TO-247 package designed for high-efficiency power conversion in applications such as solar inverters, DC/DC converters, and motor drives. It has a continuous drain current of 70A at 25°C and 49A at 100°C, with a typical on-resistance of 30mΩ at 25°C and 43mΩ at 150°C. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.44 to 0.57 K/W. It is RoHS compliant and features fast switching, low gate charge, and body diode reverse recovery characteristics suitable for hard-switching topologies.
SCT3030AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3030AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3030AL | SCT3030AL |
| Product Name | 650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 650 volts | |
| rDS(on) | 0.0300 ohms |
