The SCT3022KL is a 1200V N-channel silicon carbide (SiC) power MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 22 mΩ at 25°C and a continuous drain current rating of 95 A at 25°C case temperature, reducing to 67 A at 100°C. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.27 to 0.35 K/W. The gate-source voltage range is -4 V to +22 V, with a recommended drive voltage of 0 V/+18 V. The MOSFET is RoHS compliant and features fast switching and low reverse recovery characteristics in its body diode.
SCT3022KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3022KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3022KL | SCT3022KL |
| Product Name | 1200V, 95A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 1200 volts | |
| rDS(on) | 0.0220 ohms |
