The SCT3022AL is a 650 V N-channel silicon carbide (SiC) power MOSFET in a TO-247N package, rated for a continuous drain current of 93 A at 25°C and 65 A at 100°C, with a typical on-resistance of 22 mΩ at 25°C. It features fast switching and reverse recovery, and is RoHS compliant. The device has a maximum junction temperature of 175°C and a thermal resistance junction-to-case of 0.34 to 0.44 K/W.
SCT3022AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3022AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3022AL | SCT3022AL |
| Product Name | 650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 650 volts | |
| rDS(on) | 0.0220 ohms |
