ROHM Semiconductor GmbH 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT3017ALHR

Description
AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet
Description
AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet

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650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive - SCT3017ALHR - ROHM Semiconductor GmbH
Willich, Germany
650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3017ALHR
650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT3017ALHR
AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3017ALHR
Product Name 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Package Type TO-247; TO-247N
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