The SCT3017ALHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET designed for high-power switching applications. It is packaged in a TO-247N case with a maximum drain-source voltage of 650 V and a continuous drain current of 118 A at 25°C junction temperature. The device features a typical on-resistance of 17 mΩ at 25°C, a junction temperature rating up to 175°C, and is qualified to AEC-Q101. It supports a gate-source voltage range of -4 V to +22 V, with a recommended drive voltage of +18 V. The thermal resistance from junction to case is 0.27 K/W (typical). It is RoHS compliant and uses Pb-free lead plating.
AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT3017ALHR |
| Product Name | 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247N |
