The SCT3017AL is a 650 V N-channel silicon carbide (SiC) MOSFET in a TO-247N package, designed for high-efficiency power conversion in applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-state resistance of 17 mΩ at 25°C and a continuous drain current of 118 A at 25°C, decreasing to 83 A at 100°C. The device supports a peak pulsed drain current of 295 A and features a gate-source voltage range of -4 V to +22 V, with a recommended drive voltage of 0 V / +18 V. The junction temperature rating is 175°C, and thermal resistance from junction to case is 0.27 K/W typical. The part is RoHS compliant and meets the AEC-Q200 automotive qualification standard. The body diode exhibits a reverse recovery time of 31 ns and a peak reverse recovery current of 13 A under test conditions.
SCT3017AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3017AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT3017AL | SCT3017AL |
| Product Name | 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 650 volts | |
| rDS(on) | 0.0170 ohms |
