N-channel silicon carbide (SiC) power MOSFET for switch mode and auxiliary power supplies, housed in a TO-268-2L package with a drain-source voltage rating of 1700 V, continuous drain current of 4 A at 25°C, and power dissipation of 44 W. The device features a typical on-resistance of 1.15 Ω at 25°C, junction temperature range of -55°C to 175°C, and is RoHS compliant. The package uses embossed tape with a reel size of 330 mm and a tape width of 24 mm, packed in units of 400.
1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.
1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Power MOSFET |
| Product Number | SCT2H12NY | SCT2H12NY |
| Product Name | 1700V, 4A, SMD, Silicon-carbide (SiC) MOSFET | N-channel Silicon Carbide Power MOSFET |
| Package Type | TO-268-2L | |
| Transistor Grade / Operating Range | Commercial | Commercial |
| Transistor Technology / Material | Silicon Carbide | |
| V(BR)DSS | 1700 volts | |
| rDS(on) | 1.15 ohms |
