RX3G18BGN is an N-channel 40V power MOSFET in a TO-220AB package, designed for switching applications. It has a maximum continuous drain current of ±180A and a maximum on-resistance of 1.64mΩ at 10V gate-source voltage. The device supports a peak pulsed drain current of ±360A and dissipates up to 125W, with a junction temperature range of -55°C to +150°C. It is RoHS compliant, Pb-free plating, and 100% UIS tested. Thermal resistance from junction to case is 1.0°C/W maximum. The device features a gate threshold voltage range of 1.0V to 2.5V and includes body diode characteristics with a forward voltage of 1.2V at 90A and reverse recovery time of 100ns.
RX3G18BGN is a power MOSFET with low on - resistance, suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RX3G18BGN |
| Product Name | Nch 40V 180A, TO-220AB, Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 40 volts |
| IDSS | 180000 milliamps |
| QG | 85 nC |
| PD | 125000 milliwatts |
