ROHM Semiconductor GmbH Nch 30V 6.5A, HEML1616L7, Power MOSFET RW4E065GN

Description
RW4E065GN is a power MOSFET with low on - resistance, suitable for switching.
Description
RW4E065GN is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
Datasheet Summary
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RW4E065GN is an N-channel 30 V power MOSFET in a DFN1616-7T package, designed for switching applications such as DC/DC converters and battery switches. It has a continuous drain current of ±6.5 A and a maximum on-resistance of 22.5 mΩ at VGS = 10 V and ID = 6.5 A. The device dissipates up to 1.5 W and operates with a junction temperature range of -55 °C to +150 °C. Thermal resistance junction-to-ambient is 83.4 °C/W when mounted on a 40×40×0.8 mm copper board. The part is RoHS compliant and halogen free.

Datasheet Summary
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RW4E065GN is an N-channel 30 V power MOSFET in a DFN1616-7T package, designed for switching applications such as DC/DC converters and battery switches. It has a continuous drain current of ±6.5 A and a maximum on-resistance of 22.5 mΩ at VGS = 10 V and ID = 6.5 A. The device dissipates up to 1.5 W and operates with a junction temperature range of -55 °C to +150 °C. Thermal resistance junction-to-ambient is 83.4 °C/W when mounted on a 40×40×0.8 mm copper board. The part is RoHS compliant and halogen free.

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Nch 30V 6.5A, HEML1616L7, Power MOSFET - RW4E065GN - ROHM Semiconductor GmbH
Willich, Germany
Nch 30V 6.5A, HEML1616L7, Power MOSFET
RW4E065GN
Nch 30V 6.5A, HEML1616L7, Power MOSFET RW4E065GN
RW4E065GN is a power MOSFET with low on - resistance, suitable for switching.

RW4E065GN is a power MOSFET with low on - resistance, suitable for switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RW4E065GN
Product Name Nch 30V 6.5A, HEML1616L7, Power MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 6500 milliamps
QG 2.1 nC
PD 1500 milliwatts
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