The RV2C010UN is a 20V N-channel power MOSFET designed for applications requiring efficient switching capabilities. It features a maximum continuous drain current of ¬±1.0A and a pulsed drain current rating of ¬±2.0A. The device has a low on-resistance of 470mOc, which contributes to reduced power loss during operation. It is housed in a compact DFN1006-3 package, making it suitable for space-constrained applications such as portable devices. The MOSFET is RoHS compliant and halogen-free, ensuring it meets environmental standards. It offers ESD protection up to 200V (MM) and 2kV (HBM), enhancing its reliability in various operating conditions. The operating temperature range is from -55¬8C to +150¬8C, allowing for versatility in different environments. The RV2C010UN is packaged in embossed tape for automated assembly, with a basic ordering unit of 8000 pieces.
The ultra-small package(1006size) RV2C010UN is suitable for portable devices.
The ultra-small package(1006size) RV2C010UN is suitable for portable devices.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | RV2C010UN | RV2C010UN |
| Product Name | 20V 1A Nch Power MOSFET | 20V 1A Nch Power MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 20 volts | 20 volts |
| IDSS | 1000 milliamps | 1000 milliamps |
| PD | 400 milliwatts | 400 milliwatts |