RSR025P03HZG is a P-channel MOSFET rated for -30 V drain-source voltage and ±2.5 A continuous drain current, designed for switching applications. It features a built-in gate-source protection diode, a TSMT3 surface-mount package, and a maximum power dissipation of 1.0 W. The device has a maximum on-resistance of 98 mΩ at -10 V gate-source voltage and -2.5 A drain current. It is AEC-Q101 qualified and RoHS compliant, with an operating junction and storage temperature range of -55°C to +150°C.
RSR025P03HZG is a automotive grade MOSFET with G-S protection diode, suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSR025P03HZG |
| Product Name | Pch -30V -2.5A Small Signal MOSFET |
| Polarity | P-Channel |
| V(BR)DSS | -30 volts |
| IDSS | -2500 milliamps |
| PD | 1000 milliwatts |
