ROHM Semiconductor USA, LLC 4V Drive Pch MOSFET (Corresponds to AEC-Q101) RSR025P03FRA

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Suppliers

Company
Product
Description
Supplier Links
4V Drive Pch MOSFET (Corresponds to AEC-Q101) - RSR025P03FRA - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4V Drive Pch MOSFET (Corresponds to AEC-Q101)
RSR025P03FRA
4V Drive Pch MOSFET (Corresponds to AEC-Q101) RSR025P03FRA
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RSR025P03FRA
Product Name 4V Drive Pch MOSFET (Corresponds to AEC-Q101)
Polarity P-Channel
V(BR)DSS -30 volts
IDSS -2500 milliamps
PD 1000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD910025SALI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R080M1T - AIMCQ120R080M1T - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7214-75B,118 - 1025191-BUK7214-75B,118 - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 75 volts
PD 158000 milliwatts
View Details
5 suppliers