ROHM Semiconductor USA, LLC Mosfet, N-Ch, 100V, 1A, Tsmt-3; Transistor Polarity Rohm RSR010N10FHATL

N-channel 100 V, 1 A power MOSFET in a TSMT3 surface-mount package, with a maximum drain-source on-state resistance of 520 mΩ at V_GS = 10 V and I_D = 1 A, and a continuous drain current rating of ±1 A. It includes a built-in gate-source protection diode, is RoHS compliant, and is AEC-Q101 qualified. The package dimensions are 3.00 mm max length by 1.80 mm max width.