MOSFET, N-CH, 100V, 1A, TSMT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 78Y8448 |
| Product Name | Mosfet, N-Ch, 100V, 1A, Tsmt-3; Transistor Polarity Rohm |
| IDSS | 1000 milliamps |
