P-channel MOSFET for switching applications, housed in a TSMT6 surface-mount package with dimensions conforming to SOT-457T and SC-95 standards. Rated for a drain-source voltage of -30 V and continuous drain current of ±2.5 A, with a maximum power dissipation of 1.25 W. Features a maximum on-resistance of 110 mΩ at -10 V gate-source voltage, a gate threshold voltage range of -1.0 V to -2.5 V, and a built-in gate-source protection diode. Complies with RoHS and is AEC-Q101 qualified. Operating junction and storage temperature range is -55 °C to +150 °C.
MOSFET, AEC-Q101, P-CH, -30V, -2.5A, TSMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 89Y7340 |
| Product Name | Mosfet, Aec-Q101, P-Ch, -30V, -2.5A, Tsmt; Transistor Polarity Rohm |
| IDSS | -2500 milliamps |
