RSL020P03FRA is an AEC-Q101 qualified P-channel MOSFET in a TUMT6 package for switching applications. It has a drain-source voltage rating of -30 V, continuous drain current of ±2 A, and total power dissipation of 1 W when mounted on a ceramic board. On-resistance is specified at 125 mΩ max at -1 A and -4.5 V gate-source bias. Thermal resistance from channel to ambient is 125 °C/W. The device features a body diode with forward voltage of -1.2 V at -0.8 A and gate threshold voltage ranging from -1.0 V to -2.5 V. It supports pulsed drain current up to ±8 A with pulse width ≤10 µs and duty cycle ≤1%.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSL020P03FRA | RSL020P03FRA |
| Product Name | 4V Drive Pch MOSFET (AEC-Q101 Qualified) | 4V Drive Pch MOSFET (Corresponds to AEC-Q101) |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -2000 milliamps | -2000 milliamps |
| PD | 1000 milliwatts | 1000 milliwatts |
