RSJ250P10 is a P-channel power MOSFET designed for switching applications, rated at -100 V drain-source voltage and -25 A continuous drain current. It is packaged in a TO-263S (SC-83) surface-mount case with a power dissipation of 50 W and a maximum junction temperature of 150 °C. The device has a maximum on-resistance of 63 mΩ at -10 V gate-source voltage and -25 A drain current. It is RoHS compliant and features fast switching speed and low on-resistance. The thermal resistance from junction to case is 2.5 °C/W. Packaging is tape and reel with a reel size of 330 mm and 1000 pieces per reel.
MOSFET, one of Field Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSJ250P10 | RSJ250P10 |
| Product Name | Pch -100V -25A Power MOSFET | 4V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -100 volts | -100 volts |
| IDSS | -25000 milliamps | -25000 milliamps |
| QG | 60 nC | |
| PD | 50000 milliwatts | 50000 milliwatts |
