RS1L180GN is an N-channel 60V power MOSFET designed for switching applications, housed in an HSOP8 package. It has a maximum continuous drain current of 18A at 25°C ambient temperature and a pulsed drain current of 72A. The maximum on-resistance is 5.6mΩ at 10V gate-source voltage and 18A drain current, with a power dissipation rating of 39W. The device is RoHS compliant, halogen-free, and has a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 3.2°C/W, and from junction to ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board. It is 100% Rg and UIS tested.
RS1L180GN is low on - resistance and high power package MOSFET for Switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RS1L180GN |
| Product Name | Nch 60V 68A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 68000 milliamps |
| QG | 34 nC |
| PD | 39000 milliwatts |
