RS1E321GN is an N-channel 30V power MOSFET in an HSOP8 package designed for switching applications. It has a continuous drain current of ±32A at 25°C case temperature and a maximum on-resistance of 2.1mΩ at VGS=10V and ID=32A. The device supports a pulsed drain current of ±128A and has a power dissipation rating of 34W. The junction operating temperature range is -55°C to +150°C. It is RoHS compliant and halogen-free, with 100% Rg and UIS tested. Thermal resistance from junction to case is 3.6°C/W and junction to ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board.
RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RS1E321GN |
| Product Name | Nch 30V 80A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 30 volts |
| IDSS | 80000 milliamps |
| QG | 19.6 nC |
| PD | 34000 milliwatts |
