RS1E281BN is an N-channel 30V power MOSFET in an HSOP8 package designed for switching applications. It has a continuous drain current of ±28A at 25°C case temperature, a maximum drain-source voltage of 30V, and a typical on-resistance of 2.3mΩ at VGS=10V and ID=28A. The device dissipates up to 30W and has a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 4.2°C/W and junction to ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board. It is RoHS compliant, halogen-free, and features Pb-free plating.
RS1E281BN is low on-resistance and high power small mold package MOSFET for switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RS1E281BN |
| Product Name | Nch 30V 80A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 30 volts |
| IDSS | 80000 milliamps |
| QG | 50 nC |
| PD | 30000 milliwatts |
