ROHM Semiconductor GmbH Pch -30V -80A Power MOSFET RS1E260AT

RS1E260AT is a P-channel MOSFET designed for switching applications, rated for -30 V drain-source voltage and continuous drain current of -26 A at 25°C. It features a maximum on-resistance of 3.1 mΩ at -10 V gate-source voltage and comes in an HSOP8 surface-mount package. The device supports pulsed drain current up to ±104 A and has a power dissipation limit of 40 W. It operates over a junction temperature range of -55°C to +150°C, is RoHS compliant, and meets thermal resistance values of 3.1°C/W junction-to-case and 41.7°C/W junction-to-ambient on a standard copper board.