ROHM Semiconductor GmbH Pch -30V -76A Power MOSFET RS1E220AT

RS1E220AT is a P-channel power MOSFET designed for switching applications, housed in an HSOP8 surface-mount package. It has a drain-source voltage rating of -30 V, a continuous drain current of -22 A at 25°C junction temperature, and a pulsed drain current of -88 A. The maximum on-state resistance is 4.1 mΩ at VGS = -10 V and ID = -22 A. Power dissipation is rated at 34 W, with a maximum junction temperature of 150°C and an operating temperature range of -55°C to +150°C. The device is RoHS compliant and features low on-resistance for efficient switching performance.