ROHM Semiconductor GmbH Pch -40V -8A Small Signal Power MOSFET RQ7G080AT

RQ7G080AT is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -40V and a continuous drain current of ±8A. It is packaged in a TSMT8 surface-mount package and dissipates up to 1.5W. The device has a maximum on-resistance of 18.2mΩ at -10V gate-source voltage and -8A drain current, and meets RoHS compliance. It operates over a junction temperature range of -55°C to +150°C and is qualified for automotive use under AEC-Q200. The part includes an integrated body diode with a forward voltage of -1.2V at -1.25A and a reverse recovery time of 27ns.