ROHM Semiconductor GmbH Pch -30V -10A Small Signal Power MOSFET RQ7E100AT

RQ7E100AT is a P-channel -30V, -10A small signal power MOSFET designed for switching applications, housed in a TSMT8 surface-mount package. It has a maximum drain-source on-state resistance of 11.2 mΩ at -10V gate-source voltage and -10A drain current, with a continuous drain current rating of ±10A and a power dissipation of 1.5 W. The device meets RoHS compliance and has a junction temperature range of -55°C to +150°C. Thermal resistance is 83.3°C/W when mounted on a ceramic board and 113°C/W on FR4. It is packaged in a 180mm reel with 3000 pieces per reel.