RQ5E035XN is an N-channel 30V MOSFET designed for switching applications, featuring a built-in gate-source protection diode and low on-resistance. It is packaged in a TSMT3 surface-mount case with a continuous drain current rating of ±3.5A and a maximum power dissipation of 1.0W. The device has a maximum drain-source on-state resistance of 70mΩ at 4.0V gate-source voltage and 3.5A drain current, with a junction temperature range of -55°C to +150°C. It is RoHS compliant and meets the AEC-Q200 automotive qualification standard.
RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RQ5E035XN |
| Product Name | Nch 30V 3.5A Middle Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 30 volts |
| IDSS | 3500 milliamps |
| QG | 3.3 nC |
| PD | 1000 milliwatts |
