ROHM Semiconductor GmbH Pch -30V -2.5A Small Signal MOSFET RQ5E025SP

Description
RQ5E025SP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
Description
RQ5E025SP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
Datasheet
Datasheet Summary
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RQ5E025SP is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -30V and a continuous drain current of ±2.5A. It is packaged in the TSMT3 surface-mount case and features a maximum on-resistance of 98mΩ at -10V gate-source voltage. The device includes a built-in gate-source protection diode, operates over a junction temperature range of -55°C to +150°C, and meets RoHS compliance standards with lead-free plating.

Datasheet Summary
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RQ5E025SP is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -30V and a continuous drain current of ±2.5A. It is packaged in the TSMT3 surface-mount case and features a maximum on-resistance of 98mΩ at -10V gate-source voltage. The device includes a built-in gate-source protection diode, operates over a junction temperature range of -55°C to +150°C, and meets RoHS compliance standards with lead-free plating.

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Pch -30V -2.5A Small Signal MOSFET - RQ5E025SP - ROHM Semiconductor GmbH
Willich, Germany
Pch -30V -2.5A Small Signal MOSFET
RQ5E025SP
Pch -30V -2.5A Small Signal MOSFET RQ5E025SP
RQ5E025SP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.

RQ5E025SP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RQ5E025SP
Product Name Pch -30V -2.5A Small Signal MOSFET
Polarity P-Channel
V(BR)DSS -30 volts
IDSS -2500 milliamps
PD 1000 milliwatts
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