ROHM Semiconductor GmbH Pch -60V -25A, HSMT8, Power MOSFET RQ3L070AT

The RQ3L070AT is a P-channel power MOSFET designed for switching applications, housed in an HSMT8 package. It has a drain-source voltage rating of -60 V and a continuous drain current of -7 A at 25°C ambient temperature, with a maximum power dissipation of 20 W. The on-state resistance is 28 mΩ maximum at -10 V gate-source voltage and -7 A drain current. The device is RoHS compliant and halogen-free. Its junction temperature range is -55°C to +150°C, and it has a thermal resistance from junction to case of 6.2 °C/W. The package is supplied in tape and reel format with a reel size of 330 mm and a tape width of 12 mm, carrying 3000 pieces per reel.