ROHM Semiconductor GmbH Nch 60V 120A Power MOSFET RJ1L12CGN

Description
RJ1L12CGN is low on-resistance and small surface mount package MOSFET for switching application.
Description
RJ1L12CGN is low on-resistance and small surface mount package MOSFET for switching application.
Datasheet
Datasheet Summary
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RJ1L12CGN is an N-channel 60V power MOSFET in a TO-263AB package designed for switching applications. It has a maximum continuous drain current of ±120A and a maximum on-resistance of 3.40mΩ at VₓS=10V and Iₓ=50A. The device dissipates up to 166W and has a junction-to-case thermal resistance of 0.75°C/W. It is RoHS compliant, halogen-free, and 100% UIS tested. The operating junction and storage temperature range is -55°C to +150°C.

Datasheet Summary
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RJ1L12CGN is an N-channel 60V power MOSFET in a TO-263AB package designed for switching applications. It has a maximum continuous drain current of ±120A and a maximum on-resistance of 3.40mΩ at VₓS=10V and Iₓ=50A. The device dissipates up to 166W and has a junction-to-case thermal resistance of 0.75°C/W. It is RoHS compliant, halogen-free, and 100% UIS tested. The operating junction and storage temperature range is -55°C to +150°C.

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Nch 60V 120A Power MOSFET - RJ1L12CGN - ROHM Semiconductor GmbH
Willich, Germany
Nch 60V 120A Power MOSFET
RJ1L12CGN
Nch 60V 120A Power MOSFET RJ1L12CGN
RJ1L12CGN is low on-resistance and small surface mount package MOSFET for switching application.

RJ1L12CGN is low on-resistance and small surface mount package MOSFET for switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RJ1L12CGN
Product Name Nch 60V 120A Power MOSFET
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 120000 milliamps
QG 74 nC
PD 166000 milliwatts
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