RJ1L12BGN is an N-channel 60V power MOSFET in a TO-263AB package, designed for switching applications. It has a maximum continuous drain current of ±120A and a maximum on-resistance of 2.90mΩ at VGS=10V and ID=40A. The device dissipates up to 192W and features a junction temperature range of -55°C to +150°C. It is RoHS compliant, halogen-free, and 100% UIS tested. The thermal resistance from junction to case is 0.65°C/W. Packaged in tape and reel with a reel size of 330mm, tape width of 24mm, and 1000 pieces per reel.
RJ1L12BGN is low on-resistance and small surface mount package MOSFET for switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJ1L12BGN |
| Product Name | Nch 60V 120A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 120000 milliamps |
| QG | 94 nC |
| PD | 192000 milliwatts |
