RJ1G12BGN is an N-channel 40V power MOSFET designed for switching applications, housed in a TO-263AB package with a maximum power dissipation of 178W and a continuous drain current rating of ±120A. The device has a maximum on-state resistance of 1.86mΩ at VGS=10V and ID=50A, with 100% UIS tested reliability. It is RoHS compliant and halogen-free, operating over a junction temperature range of -55°C to +150°C.
RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJ1G12BGN |
| Product Name | Nch 40V 120A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 40 volts |
| IDSS | 120000 milliamps |
| QG | 82 nC |
| PD | 178000 milliwatts |
