RJ1G08CGN is an N-channel 40V power MOSFET in a TO-263AB package, designed for switching applications. It has a maximum continuous drain current of ±80A and a typical on-state resistance of 4.2mΩ at 10V gate voltage. The device is rated for 78W power dissipation, with a junction temperature range of -55°C to +150°C, and features 100% UIS testing. It is RoHS compliant and fully Pb-free plating. Thermal resistance from junction to case is rated at a maximum of 1.6°C/W.
RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package (LPTL), suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJ1G08CGN |
| Product Name | Nch 40V 80A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 40 volts |
| IDSS | 80000 milliamps |
| QG | 15.7 nC |
| PD | 78000 milliwatts |
